DM52L12T6-V
The DM52L12T6-V is a 1200V 325A Automotive IGBT Module in a SiC MOSFET_Single Switch configuration, built on SiC MOSFET Gen.2 chip technology. It is housed in the T6 package. Thermal design: isolated heatsink.
Typical applications include Hybrid and Electric Vehicle, Inverter for motor drive. It targets the Automotive market. Key electrical characteristics: RDS(on) 5.2 mΩ (at 25°C). Download the datasheet for full specifications and ordering information.
Technical specifications
| Part number | DM52L12T6-V |
|---|---|
| Category | Automotive IGBT Module |
| Voltage | 1200V |
| Current | 325A |
| Chip technology | SiC MOSFET Gen.2 |
| Circuit topology | SiC MOSFET_Single Switch |
| Package | T6 |
| Baseplate | Isolated heatsink |
| Substrate | Si3N4 AMB technology |
| RDS(on) @ 25°C | 5.2 mΩ |
| Status | active |