GD660HTX75P7HB_D
The GD660HTX75P7HB_D is a 750V 660A Automotive IGBT Module in a 3 Phase Bridge with NTC configuration, built on Trench FS IGBT, Low Loss chip technology. It is housed in the P7 package. Thermal design: isolated copper pinfin baseplate.
Typical applications include Hybrid and Electric Vehicle, Inverter for motor drive. It targets the Automotive market. Key electrical characteristics: VCE(sat) 1.25 V (at 25°C). Download the datasheet for full specifications and ordering information.
Technical specifications
| Part number | GD660HTX75P7HB_D |
|---|---|
| Category | Automotive IGBT Module |
| Voltage | 750V |
| Current | 660A |
| Chip technology | Trench FS IGBT, Low Loss |
| Circuit topology | 3 Phase Bridge with NTC |
| Package | P7 |
| Baseplate | Isolated copper pinfin baseplate |
| Substrate | Si3N4 AMB technology |
| VCE(sat) @ 25°C | 1.25 V |
| Status | active |