DM26L12T6-V T6 package

DM26L12T6-V

The DM26L12T6-V is a 1200V 620A Automotive SiC MOSFET Module in a SiC MOSFET_Single Switch configuration, built on SiC MOSFET Gen.2 chip technology. It is housed in the T6 package. Thermal design: isolated heatsink.

Typical applications include Hybrid and Electric Vehicle, Inverter for motor drive. It targets the Industrial market. Key electrical characteristics: RDS(on) 2.6 mΩ (at 25°C). Download the datasheet for full specifications and ordering information.

Technical specifications

Part numberDM26L12T6-V
CategoryAutomotive SiC MOSFET Module
Voltage1200V
Current620A
Chip technologySiC MOSFET Gen.2
Circuit topologySiC MOSFET_Single Switch
PackageT6
BaseplateIsolated heatsink
SubstrateSi3N4 AMB technology
RDS(on) @ 25°C2.6 mΩ
Statusactive

Applications

Markets

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Download datasheet (PDF)