DM1X0L17EBRB TO-263-7L package

DM1X0L17EBRB

The DM1X0L17EBRB is a 1700V 8A Discrete SiC MOSFET in a SiC MOSFET_Single Switch configuration, built on SiC MOSFET Gen.2 chip technology. It is housed in the TO-263-7L package.

Typical applications include DC/DC converter, Hybrid electrical vehicles, Inductive charger systems. It targets the Automotive and Industrial markets. Key electrical characteristics: RDS(on) 0.5 mΩ (at 25°C). Download the datasheet for full specifications and ordering information.

Technical specifications

Part numberDM1X0L17EBRB
CategoryDiscrete SiC MOSFET
Voltage1700V
Current8A
Chip technologySiC MOSFET Gen.2
Circuit topologySiC MOSFET_Single Switch
PackageTO-263-7L
RDS(on) @ 25°C0.5 mΩ
Statusnew

Applications

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Download datasheet (PDF)