
The DM1X0L17EBRB is a 1700V 8A Discrete SiC MOSFET in a SiC MOSFET_Single Switch configuration, built on SiC MOSFET Gen.2 chip technology. It is housed in the TO-263-7L package.
Typical applications include DC/DC converter, Hybrid electrical vehicles, Inductive charger systems. It targets the Automotive and Industrial markets. Key electrical characteristics: RDS(on) 0.5 mΩ (at 25°C). Download the datasheet for full specifications and ordering information.
| Part number | DM1X0L17EBRB |
|---|---|
| Category | Discrete SiC MOSFET |
| Voltage | 1700V |
| Current | 8A |
| Chip technology | SiC MOSFET Gen.2 |
| Circuit topology | SiC MOSFET_Single Switch |
| Package | TO-263-7L |
| RDS(on) @ 25°C | 0.5 mΩ |
| Status | new |