GD1200HFY120C3S C3.1 package

GD1200HFY120C3S

The GD1200HFY120C3S is a 1200V 1200A IGBT Module in a Half Bridge configuration, built on Advanced Trench FS IGBT, Low Loss chip technology. It is housed in the C3.1 package. Thermal design: isolated copper baseplate.

Typical applications include High Power Converter, Inverter for motor drive, Wind Power. It targets the Industrial and New Energies markets. Key electrical characteristics: VCE(sat) 1.7 V (at 25°C). Download the datasheet for full specifications and ordering information.

Technical specifications

Part numberGD1200HFY120C3S
CategoryIGBT Module
Voltage1200V
Current1200A
Chip technologyAdvanced Trench FS IGBT, Low Loss
Circuit topologyHalf Bridge
PackageC3.1
BaseplateIsolated copper baseplate
SubstrateDBC technology
VCE(sat) @ 25°C1.7 V
Statusnot for new design

Applications

Markets

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Download datasheet (PDF)