GD275MJS120L6S
The GD275MJS120L6S is a 1200V 275A IGBT Module in a NPC1 configuration, built on Fast Trench FS IGBT, Low Loss chip technology. It is housed in the L6 package. Thermal design: isolated copper baseplate.
Typical applications include Solar Power. It targets the New Energies market. Key electrical characteristics: VCE(sat) 2 V (at 25°C). Download the datasheet for full specifications and ordering information.
Technical specifications
| Part number | GD275MJS120L6S |
|---|---|
| Category | IGBT Module |
| Voltage | 1200V |
| Current | 275A |
| Chip technology | Fast Trench FS IGBT, Low Loss |
| Circuit topology | NPC1 |
| Package | L6 |
| Baseplate | Isolated copper baseplate |
| Substrate | Si3N4 AMB technology |
| VCE(sat) @ 25°C | 2 V |
| Status | active |