GD1000HFX170P2S P2 package

GD1000HFX170P2S

The GD1000HFX170P2S is a 1700V 1000A IGBT Module in a Half Bridge configuration, built on Trench FS IGBT, Low Loss chip technology. It is housed in the P2 package. Thermal design: isolated copper baseplate.

Typical applications include Auxiliary Inverter, High Power Converter, Wind Power. It targets the Industrial and New Energies markets. Key electrical characteristics: VCE(sat) 1.95 V (at 25°C). Download the datasheet for full specifications and ordering information.

Technical specifications

Part numberGD1000HFX170P2S
CategoryIGBT Module
Voltage1700V
Current1000A
Chip technologyTrench FS IGBT, Low Loss
Circuit topologyHalf Bridge
PackageP2
BaseplateIsolated copper baseplate
SubstrateDBC technology
VCE(sat) @ 25°C1.95 V
Statusactive

Applications

Markets

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Download datasheet (PDF)