GD650HFX170P1S P1 package

GD650HFX170P1S

The GD650HFX170P1S is a 1700V 650A IGBT Module in a Half Bridge configuration, built on Trench FS IGBT, Low Loss chip technology. It is housed in the P1 package. Thermal design: isolated copper baseplate.

Typical applications include High Power Converter, Inverter for motor drive, Solar Power, Wind Power. It targets the Industrial and New Energies markets. Key electrical characteristics: VCE(sat) 1.9 V (at 25°C). Download the datasheet for full specifications and ordering information.

Technical specifications

Part numberGD650HFX170P1S
CategoryIGBT Module
Voltage1700V
Current650A
Chip technologyTrench FS IGBT, Low Loss
Circuit topologyHalf Bridge
PackageP1
BaseplateIsolated copper baseplate
SubstrateDBC technology
VCE(sat) @ 25°C1.9 V
Statusactive

Applications

Markets

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Download datasheet (PDF)