GD10PJX65L1S L1 package

GD10PJX65L1S

The GD10PJX65L1S is a 650V 10A IGBT Module in a PIM : 3 Phase Rectifier + Brake + 3 Phase Inverter OE configuration, built on Trench FS IGBT, Low Loss chip technology. It is housed in the L1 package. Thermal design: baseplate‑less power module with exposed DBC substrate for direct cooling.

Typical applications include AC and DC servo drive amplifier, Inverter for motor drive, UPS. It targets the Industrial market. Key electrical characteristics: VCE(sat) 1.45 V (at 25°C). Download the datasheet for full specifications and ordering information.

Technical specifications

Part numberGD10PJX65L1S
CategoryIGBT Module
Voltage650V
Current10A
Chip technologyTrench FS IGBT, Low Loss
Circuit topologyPIM : 3 Phase Rectifier + Brake + 3 Phase Inverter OE
PackageL1
BaseplateBaseplate‑less power module with exposed DBC substrate for direct cooling
SubstrateDBC technology
VCE(sat) @ 25°C1.45 V
Statusnot for new design

Applications

Markets

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Download datasheet (PDF)