GD10PWX65F1S_B22
The GD10PWX65F1S_B22 is a 650V 10A IGBT Module in a PIM : Single Phase Rectifier + Brake + 3 Phase Inverter OE configuration, built on Trench FS IGBT, Low Loss chip technology. It is housed in the F1 package. Thermal design: baseplate‑less power module with exposed DBC substrate for direct cooling.
Typical applications include AC and DC servo drive amplifier, Inverter for motor drive, UPS. It targets the Industrial market. Key electrical characteristics: VCE(sat) 1.45 V (at 25°C). Download the datasheet for full specifications and ordering information.
Technical specifications
| Part number | GD10PWX65F1S_B22 |
|---|---|
| Category | IGBT Module |
| Voltage | 650V |
| Current | 10A |
| Chip technology | Trench FS IGBT, Low Loss |
| Circuit topology | PIM : Single Phase Rectifier + Brake + 3 Phase Inverter OE |
| Package | F1 |
| Baseplate | Baseplate‑less power module with exposed DBC substrate for direct cooling |
| Substrate | DBC technology |
| VCE(sat) @ 25°C | 1.45 V |
| Status | active |